Low threshold current InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy

Strained-layer InGaAs/GaAs/GaInP separate confinement heterostructure single-quantum well lasers have been fabricated using gas-source molecular beam epitaxy. A threshold current density as low as 72 A/cm2 was achieved for a broad-area, uncoated Fabry–Perot laser with a cavity length of 1200 μm. The internal quantum efficiency and internal waveguide loss were 91% and 8.8 cm−1, respectively. A high characteristic temperature, 140 K, was obtained.