Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 /spl mu/m SRAMs

Irradiation of electronic devices has varying impact on their electrical characteristics, according to the concomitant bias scenario. Under bias, there is a process of continuous degradation; but recovery will occur if subsequent irradiation is performed without bias voltage. This phenomenon, known as "Radiation-Induced Charge Neutralization" (RICN), was studied by us, using individual components (inverters) and complex integrated circuits (0.35 /spl mu/m static random access memories). Our study focused on the effects of irradiation and bias on electronic component response.