Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11−22) InGaN layers

We report on the growth kinetics of semipolar (11−22) InGaN layers by plasma-assisted molecular beam epitaxy. Similarly to (0001)-oriented InGaN, optimum growth conditions for this crystallographic orientation correspond to the stabilization of two atomic layers of In on the growing InGaN surface, and the limits of this growth window in terms of substrate temperature and In flux lie at same values for both polar and semipolar material. However, in semipolar samples, the incorporation of In is inhibited, even for growth temperatures within the Ga-limited regime of polar InGaN growth.