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The effect of the post metallization final annealing step on hot-electron-induced device degradation in MOSFET's with various drain/source structures has been studied. It is shown that the hydrogen ambient during the final annealing enhances the hot-electron-induced degradation rate. By performing the final annealing in the nitrogen ambient, the device reliability can be significantly improved without sacrificing any of the device performances.
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Hsu et al. (1985) studied this question.
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