GaN based light emitting diodes grown on Si(111)by molecular beam epitaxy

The authors have demonstrated the operation of GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy. Electron injection is achieved through the n type Si substrate and electroluminescence peaks between 500–550 in the current injection range of 20–65 A/cm2 at 5–7.5 volts.