Molecular hydrogen, E' center hole traps, and radiation induced interface traps in MOS devices

The authors provide long-sought direct atomic scale evidence for molecular hydrogen reactions at a specific point defect in irradiated thermally-grown SiO/sub 2/ films on Si. Using electron spin resonance (ESR), they observe hydrogen interaction at E' centers in thermal oxides exposed to molecular hydrogen at room temperature. The E' center is the dominant hole trap in thermally grown SiO/sub 2/. The decrease in E' density occurs on a time scale similar to a comparable increase in density of interface traps. The similarity of the rate of E' decrease to the rate of interface trap increase, and the approximate agreement between the number of E' centers and interface traps involved in the two reactions are very strong evidence that E' centers are involved in the interface trap formation process in radiation and hot-carrier damaged thermally grown SiO/sub 2/ on Si.>