Single event gate rupture (SEGR) was studied using three types of power MOSFET devices with ions having incident linear energy transfers (LETs) in silicon from 26 to 82 MeV/spl middot/cm/sup 2//mg. Results are: (1) consistent with Wrobel's oxide breakdown for V/sub DS/=0 volts (for both normal incidence and angle); and (2) when V/sub GS/=0 volts, energy deposited near the Si/SiO/sub 2/ interface is more important than the energy deposited deeper in the epi.
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Selva et al. (1999) studied this question.
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