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The 1/f noise in the drain current of hot-carrier damaged MOSFETs biased in weak inversion has been studied. By the use of a biased annealing treatment to simultaneously decrease the density of oxide trapped charge (N/sub ot/) and increase the density of interface traps (D/sub it/), the authors have separated the contributions of these two kinds of defects. The results clearly indicate that, while the low-frequency 1/f noise is correlated with N/sub ot/, the high-frequency 1/f noise is correlated with D/sub it/.>
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Tsai et al. (1993) studied this question.
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