Selective electrochemical etching of p-CdTe (for photovoltaic cells)

The electrochemical etching of p-CdTe is investigated. This etching is based on a method used previously for the selective etching of n-type Cd-chalcogenide semiconductors. We show that the electrochemical etching creates a dense pattern of submicron pits, and increases the reverse bias photocurrent of a Schottky barrier device, made up of single crystal p-CdTe and a polysulfide electrolyte typically by 20%. Evidence for the selective removal of surface defects is brought up and the conditions for selective etching are discussed in brief.