More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm 2 Power Figure-of-Merit

In this letter, more than 3000 V reverse blocking Schottky-drainAlGaN-channelHEMTs are demonstrated for the first time. By using Schottky drain technology, forward breakdown voltage VFB(at 10 μA/mm) is improved from 1850~2100 V to 2200~2600 V for LGD = 22μm. Due to the high breakdown electric field of AlGaN material, reverse blocking voltage VRB(at 10 μA/mm) reaches as high as -1950 ~ -2200 V. For HEMTs with LGD= 52μm, record high VFBof >3000V andVRBof >3000V have been achieved.The leakage current is as low as 6.06 nA/mm at VDS= -2000 V.