Answers are grounded in this paper and cite their sources.
Experimental evidence of surface flashover in AlGaN/GaN heterojunction field effect transistors is presented. A practical and unambiguous way of identifying device failure by flashover is proposed. Surface flashover is the main mechanism initiating premature breakdown in these devices leading to a significant reduction of their power capability.
No takes yet. Share an insight, caveat, or question.
Sudarshan et al. (1998) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: