High-frequency time-dependent breakdown of SiO/sub 2/

The time-dependent dielectric breakdown of thin oxides (8.6-11 nm) are compared under DC, pulse, and bipolar pulse conditions for frequencies up to 4 MHz. Lifetime under unipolar pulse conditions does not deviate largely from that under DC conditions; however, lifetime under bipolar stress conditions increases by a factor of 40 to 100 at frequencies above 10 kHz. The field accelerations of breakdown time are similar for DC and pulse stressing.>