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Strong band-edge luminescence in GaN films grown by atmospheric pressure MOCVD is observed. The effect of the growth temperature and V/III ratio on the band-edge to deep level luminescence ratio (Ib/Id) indicates that a large supply of active nitrogen is essential for obtaining excellent optical properties. GaN grown under optimised conditions exhibits an Ib/Id ratio of 10.9 at 300 K and 1300 at 22 K.
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Keller et al. (1995) studied this question.
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