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The homogeneity of n-type Sn and S doped and semi-insulating Fe doped InP crystals is studied by luminescence topography, low temperature luminescence, and Raman scattering. As in GaAs nonrelational striations and faceting are the main sources of inhomogeneous impurity distribution in doped crystals and dislocations in semi-insulating ones. The fluctuations in free carrier concentration influencing the luminescence intensity are independently proved by Raman scattering spectra.
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Pastrňák et al. (1991) studied this question.
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