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Photoluminescence (PL) and Raman scattering experiments were carried out on Si-implanted and thermally annealed semi-insulating InP. The application of PL measurements to determine concentrations of free electrons at the surfaces of implanted samples is demonstrated. The carrier concentrations are estimated from the measured widths of the PL line shapes. These estimates are compared with electron concentrations obtained from the Raman scattering measurements of the coupled modes.
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Olego et al. (1985) studied this question.
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