Organic semiconductor nickel phthalocyanine-based photocapacitive and photoresistive detector

In this study, the photosensitive organic semiconductor nickel phthalocyanine (NiPc) is investigated as a photocapacitive and photoresistive detector. NiPc thin film is grown by vacuum thermal evaporation on an indium tin oxide (ITO)-coated glass substrate. Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is deposited as a top electrode by drop-casting to fabricate the ITO/NiPc/PEDOT:PSS light detector. It has been observed that under the unmodulated filament lamp illumination of up to 9720 lux the capacitance of the detectors increased up to 21, 18 and 4% at a frequency of measuring voltage of 120 Hz, 1 kHz and 10 kHz, respectively, under dark conditions. The change in resistance with the variation in the intensity of light is also investigated. The capacitance and resistance of the light detector decrease with an increase in the frequency. It is assumed that the photocapacitive and photoresistive response of the detector is associated with polarization occurring due to the transfer of photo-generated electrons and holes. The calculated results are in reasonable agreement with the experimental results.