Internal piezoelectric fields in GaInSb/InAs strained-layer superlattices probed by optically induced microwave radiation

Using a newly developed femtosecond electro-optic technique, a built-in electric field near a semiconductor surface can be measured by a contactless approach. We have observed for the first time equal strength but opposite direction of strain-induced piezoelectric fields from lattice-mismatched A face and B face of GaInSb/InAs strained-layer superlattices by optically induced microwave radiation.