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The results of proton-induced single-event upset (SEU) measurements on radiation hard silicon-on-insulator (SOI) CMOS SRAMS are discussed and compared with a generalized figure-of-merit (FOM) prediction. Fairly large differences between the measured upset cross section and the cross section predicted by the FOM prediction were observed. The measured upset cross section is explained with a double-node hit model. Calculated double-node hit model cross sections compare well with measured data for SOI 1- and 4-Mb SRAMS.
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Liu et al. (2004) studied this question.
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