Hole concentration of CuI thin film decreased but Hall mobility increased with the rise of reaction temperature of copper films with iodine vapor. The heat-treatment of CuI film in vacuum brings out the decrease of hole concentration because of the escape of excess iodine from the film. Oxygen diffuses into the bulk of Cut film at high temperatures and raises the conductance of the film. The activation energy for diffusion was determined as 0.82 eV. Water vapor is chemisorbed on the surface of CuI and lowers the conductance at room temperature.
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Kokubun et al. (1971) studied this question.
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