Electro-optic sampling of photoconductive transients on a subpicosecond time scale is used to study hot-carrier transport in GaAs. The results reported here are interpreted as direct time-domain observations of nonequilibrium transport on a subpicosecond time scale and they clearly show both an overshoot and bias-dependent delay at high excitation energy which are consistent with published Monte Carlo predictions.
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Meyer et al. (1988) studied this question.
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