Tensile Strain in Si Due to Expansion of Lattice Spacings in CeO2 Epitaxially Grown on Si(111) , Nishikawa, Yukie, Matsushita, Daisuke, Satou, Nobutaka, Yoshiki, Masahiko, Schimizu, Tatsuo, Yamaguchi, Takeshi, Satake, Hideki, Fukushima, Noburu
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Nishikawa et al. (2004) studied this question.
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