Solution deposition and heteroepitaxial crystallization of LaNiO3 electrodes for integrated ferroelectric devices

Electrically conducting LaNiO3 (LNO) thin layers were deposited on (100)SrTiO3 (STO) and (100)LaAlO3 (LAO) substrates and crystallized at temperatures between 700 and 800 °C. The chemical method of deposition was solution sol-gel processing. X-ray 2θ and rocking curve measurements, φ scans, and atomic force microscopy studies revealed the degree of crystallinity and heteroepitaxy for the integrated electrodes. The full-width at half-maximum for (100) LNO deposited on LAO and STO was 0.16° and 0.25°, respectively. Surface bonding states and chemistry were examined by x-ray photoelectron spectroscopy. The room temperature resistivity of LNO electrodes deposited on STO and LAO was 460 and 340 μΩ cm, respectively.