In 0.5 (Al 0.3 Ga 0.7 ) 0.5 P/In 0.2 Ga 0.8 Aspower HEMT with 65.2% power-added efficiency under 1.2 V operation

The authors report the first power performance of In0.5(Al0.3Ga0.7)0.5P/In0.2Ga0.8As double-heterojunction pseudomorphic high electron mobility transistors (DH-PHEMTs) for portable wireless power applications. At 850 MHz, a 1 µm × 5 mm device demonstrated a maximum power-added efficiency (PAE) of 65.2 and 68.2% under 1.2 and 2 V operation, respectively. At 1.9 GHz, a 53% peak PAE, a 8.3 dB linear power gain, and a 25 dBm saturated output power were obtained from the same device at a drain bias of 2 V.