Self-Heating Characterization of β -Ga2O3 Thin-Channel MOSFETs by Pulsed I –V and Raman Nanothermography

β-Ga2O3thin-channel MOSFETs were evaluated using both dc and pulsed I-V measurements. The reported pulsed I-V technique was used to study selfheating effects in the MOSFET channel. The device was analyzed over a large temperature range of 23 °C-200 °C. A relationship between dissipated power and channel temperature was established, and it was found that the MOSFET channel was heating up to 208 °C when dissipating 2.5 W/mm of power. The thermal resistance of the channel was found to be 73 °C-mm/W. The results are supported with the experimental Raman nanothermography and thermal simulations and are in reasonable agreement with pulsed I-V findings. The high thermal resistance underpins the importance of optimizing thermal management in future Ga2O3devices.