A novel scheme is proposed for a compact band-switchable power amplifier that employs Micro-Electro-Mechanical System (MEMS) switches in a matching network (MN). According to the on/off status, the switches change the frequency response of the MN, and then the optimum matching can be achieved in different frequency bands. Following the proposed scheme, a dual-band GaAs FET amplifier is designed for the 0.9-GHz and 1.9-GHz bands. The experimental results exhibit the small signal gain of greater than 16 dB and the saturated output power of 31 dBm in each frequency band with adequate efficiency. The performance levels are very close to those of single-mode power amplifiers employing the same FET.
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Fukuda et al. (2004) studied this question.
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