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This letter presents a balanced MMIC power amplifier (PA) operating from 100 to 114 GHz for backhaul applications, fabricated using a commercial 0.1-μm GaAs pHEMT technology. The amplifier achieves a saturated output power ranging from 20.3 to 24.1 dBm, with a power-added efficiency (PAE) between 5.3% and 11.9% across the operating band. Additionally, the amplifier provides up to 18.2-dB gain with only three common-source stages.
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Kaval et al. (2025) studied this question.
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