The photoluminescence in Si+-implanted SiO2 films with rapid thermal anneal

Two photoluminescence (PL) bands were observed from Si+-implanted SiO2 films after rapid thermal anneal (RTA) at ⩾950 °C. The PL band at 2.2 eV was obtained from the films with RTA in dry nitrogen and the other one at 1.9 eV was obtained from the films with RTA in wet nitrogen. The luminescence at 2.2 eV disappeared after the films were reannealed with an electrical oven at ⩾600 °C, which is similar to the behavior of oxygen- and hydrogen-deficient structures, and therefore, the mechanism of this PL band was attributed to the Eδ′ center. The other one at the 1.9 eV band, being related closely to Si–O–H structures and still appearing after being reannealed to 800 °C, could be ascribed to the effect of nonbridging oxygen hole centers.