Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with f/sub T/=23 GHz and f/sub max/=34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at /spl lambda/=850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB./spl Omega/ and bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.
No takes yet. Share an insight, caveat, or question.
Rieh et al. (1998) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: