What question did this study set out to answer?

To present experimental junction measurement techniques that determine the fundamental properties of deep energy levels in semiconductor materials.

September 1, 1981Journal of Physics E Scientific InstrumentsOpen Access

Fundamentals of junction measurements in the study of deep energy levels in semiconductors

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Authors

HGH. G. GrimmeissQuaid-i-Azam University COC. OvrénABB (Switzerland)

Discussion

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Implication

Experimental methodology demonstrates junction measurement techniques extract deep energy level kinetics in semiconductors, indicating a simplified single-sample characterization approach.

Key Points

To present experimental junction measurement techniques that determine the fundamental properties of deep energy levels in semiconductor materials.
Monitored changes in electron occupancies of deep energy levels within the space-charge regions of semiconductor junction barriers.
Measured responses under thermal and optical stimuli across experiments using a single material sample.
Designed experimental conditions such that output signals depend on only one or two kinetic parameters at a time.
Enabled absolute quantification of thermal emission rates, optical emission rates, and capture cross sections from a single sample.
Simplified experimental data evaluation by isolating signals to one or two active parameters per measurement routine.

Cite This Study

Grimmeiss et al. (1981) studied this question.

synapsesocial.com/papers/6a94eca86a42edee3f2c8f2d https://doi.org/10.1088/0022-3735/14/9/002

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September 1, 1981Journal of Physics E Scientific InstrumentsOpen Access

Fundamentals of junction measurements in the study of deep energy levels in semiconductors

View Full Paper

Ask AI

Bookmark

Authors

HGH. G. GrimmeissQuaid-i-Azam University COC. OvrénABB (Switzerland)

Discussion

Member takes

Implication

Experimental methodology demonstrates junction measurement techniques extract deep energy level kinetics in semiconductors, indicating a simplified single-sample characterization approach.

Key Points

To present experimental junction measurement techniques that determine the fundamental properties of deep energy levels in semiconductor materials.
Monitored changes in electron occupancies of deep energy levels within the space-charge regions of semiconductor junction barriers.
Measured responses under thermal and optical stimuli across experiments using a single material sample.
Designed experimental conditions such that output signals depend on only one or two kinetic parameters at a time.
Enabled absolute quantification of thermal emission rates, optical emission rates, and capture cross sections from a single sample.
Simplified experimental data evaluation by isolating signals to one or two active parameters per measurement routine.

Cite This Study

Grimmeiss et al. (1981) studied this question.

synapsesocial.com/papers/6a94eca86a42edee3f2c8f2d https://doi.org/10.1088/0022-3735/14/9/002

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