Photoemission core level spectroscopy using synchrotron radiation was employed to study the effect of alkali metals on semiconductor oxidation. In presence of a cesium monolayer on InP(110), we found an exceptionally large increase of the oxidation by 10 13 . On Si(100), a similar effect was observed with cesium and sodium with the oxidation enhanced by 3-5 orders of magnitude. Furthermore, in this latter case, it was possible to remove Cs and Na catalysts by annealing at low temperatures, and to form a SiO 2 -Si interface.
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Soukiassian et al. (1987) studied this question.
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