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High resolution Si 2p photoelectron spectra obtained with synchrotron radiation are used to determine the distribution of oxidation states in the intermediary layer at the SiO2-Si interface. A ratio of 0.4:0.3:0.3 is found for the Si3+:Si2+:Si1+ intensities independent of Si surface orientation and oxide thickness. The interface is not completely abrupt (5±1 Å width).
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Hollinger et al. (1984) studied this question.
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