An integrated photoreceiver using a pin photodiode and GaInAs/AlInAs HEMTs has been fabricated and characterised. The circuitry consists of a high input impedance front-end followed by an equalising second stage to compensate for the input capacitance. A bandwidth of 18 GHz was achieved which is, to the authors' knowledge, the highest reported bandwidth for an integrated photoreceiver on InP.
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Klepser et al. (1995) studied this question.
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