Transimpedance amplifiers fabricated withIn 0.52 Al 0.48 As/In 0.53 Ga 0.47 As doped-channel heterostructures

Transimpedance amplifiers fabricated with InAlAs/InGaAs doped-channel field effect transistors (DCFETs) are demonstrated. Owing to the high linearity of the DCFET device performance, this amplifier circuit shows a wide dynamic range in gain profile, indicating great promise for driving the next generation circuits in communication systems. The transimpedance gain is as high as 460 Ω and the maximum bandwidth 7.3 GHz.