A monolithic photoreceiver OEIC for λ = 1.55 µm consisting of a waveguide pin photodiode and an InAlAs/InGaAs HEMT distributed amplifier has been fabricated using a single-step MOVPE growth technique. It has a 3 dB-down frequency of 20 GHz and operates at 20 Gbit/s with a sensitivity of –10.4 dBm.
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Takahata et al. (1997) studied this question.
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