A monolithically integrated photoreceiver is presented, based on a new integration concept comprising a waveguide integrated photodiode and a travelling wave GaInAs/AlInAs-HEMT amplifier. A record 3 dB bandwidth of 27 GHz is measured and a clearly open eye is obtained for a 20 Gbit/s pseudo-random bit stream. This high speed performance was achieved with photolithographically defined 0.7 µm gate length HEMTs, regrown by MBE on semi-insulating GaInAsP waveguide layers.
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Umbach et al. (1996) studied this question.
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