The successful fabrication of AlInAs/GaInAs HEMTs, regrown by MBE on patterned optical waveguide surfaces after the local removal of a previously grown photodiode layer stack, is reported. The devices are part of a distributed amplifier within an integrated optoelectronic receiver intended to operate at a 1.55 µm wavelength and at bit rates of 20 and/or 40 Gbit/s. The performance of the HEMTs is highly comparable to reference devices grown on planar surfaces.
No takes yet. Share an insight, caveat, or question.
Schramm et al. (1996) studied this question.