20 Gbit/s long wavelength monolithic integratedphotoreceiver grown on GaAs

The first 20 Gbit/s 1.3–1.55 µm wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using AlGaAs/GaAs HEMTs. At a wavelength of 1.3 µm, the integrated InGaAs MSM photodiode has a responsivity of 0.32 A/W and the photoreceiver has a –3 dB bandwidth of 16.5 GHz. Clearly-opened eye diagrams for a 20 Gbit/s 1.55 µm optical data stream have been demonstrated.