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We report the first room-temperature experimental observation of negative differential resistance in a strained-layer double barrier resonant tunneling structure. Room-temperature negative differential resistance (peak-to-valley ratio=1.4) was observed in GaAs-AlGaAs-InxGa1−xAs-AlGaAs-GaAs structure for indium compositions as high as x=0.09. We show that the onset of negative differential resistance can be adjusted by varying only the indium composition while holding all the other design parameters constant.
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Lee et al. (1986) studied this question.
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