The importance of impact ionization processes on the electronic transport in quantum well infrared photodetectors (QWIPs) is experimentally and theoretically investigated. Dark and optical current analysis in Al x Ga 1− x As/GaAs-QWIP structures in which the first barrier thickness or the number of wells is varied leads to the conclusion that, under normal QWIP bias conditions, impact ionization processes occur only in the first two periods and not in the entire structure.
No takes yet. Share an insight, caveat, or question.
Gendron et al. (2003) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: