By a simple method, that is, by heating raw materials in a flowing gas at ambient pressure, Si 3 N 4, Ga 2 O 3, and ZnO nanowires, SiC nanocables, and SiO 2 amorphous nanowires are synthesized without metal catalysts. The diameters of these one-dimensional nanoscale materials are greatly affected by synthesis temperatures. At suitable synthesis temperatures, their diameters are <100 nm. The growth mechanisms of these nanowires are discussed preliminarily.
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Zhang et al. (2002) studied this question.
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