Unipolar complementary circuits using double electron layer tunneling transistors

We demonstrate unipolar complementary circuits consisting of a pair of resonant tunneling transistors based on the gate control of two-dimensional–two-dimensional interlayer tunneling, where a single transistor—in addition to exhibiting a well-defined negative-differential resistance—can be operated with either positive or negative transconductance. Details of the device operation are analyzed in terms of the quantum capacitance effect and bandbending in a double quantum well structure, and show good agreement with experiment. Application of resonant tunneling complementary logic is discussed by demonstrating complementary static random access memory using two devices connected in series.