Photoluminescence from GaAs/AlGaAs Quantum Wells Grown at 350°C by Conventional Molecular Beam Epitaxy

Photoluminescence measurements have been carried out for GaAs/AlGaAs single quantum well (SQW) structures grown without interruption by conventional molecular beam epitaxy. The full widths at half-maximum (FWHM) from QWs having thin well width were reduced monotonously with the decrease of growth temperature until 350°C to one-half. This reduction of FWHM was explained by the transition of the top and bottom heterointerfaces which became close to the effective smooth interfaces at 350°C. The peak intensity had only a weak dependence on the growth temperature at the same temperature.