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Optical absorption is investigated for SiC crystals irradiated with 7 MeV electrons. The band gap of the specimen is found to be narrowed from 3.01 eV before irradiation to 2.81 eV after irradiation with 3 × 1018 electrons/cm2. It is recovered to 2.99 eV by isochronal annealing up to 1000 °C for 30 minutes in hydrogen atmosphere. Two annealing stages are observed at around 150 and 650 °C. The activation energies of the recovery for the two stages are estimated to be about 0.16 and 1.3 eV, respectively.
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Yasuda et al. (1982) studied this question.
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