MOCVD growth of GaN on SEMI-spec 200 mm Si

We describe the results produced from our research on integrating GaN devices with Si CMOS integrated circuits. High quality, low bow and robust 200 mm GaN on SEMI-spec epitaxial Si (725 μ m) wafers are achieved by using a unique shaped susceptor and careful control of buffer design. High brightness InGaN/GaN MQW LEDs emitting at 450 nm with total III-N stack thickness of 3.6 μ m have also been demonstrated. The growth technology of GaN on SEMI-spec 200 mm leads to new wafer/device platforms such as GaN-OI and CMOS + GaN that will open new avenues in device performance and integration of III-N devices with Si CMOS.