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A method of numerical modelling the C–U profiles of heterostructures is presented in which the integration of Poisson's equation without iteration is carried out from the bulk interior towards the surface. The method is used in order to calculate the apparent carrier concentration profiles for differently graded heterojunctions of the system GaAs/(AlGa)As. The compositional grading rather than the doping grading is found to be the main factor influencing the C–U relationship. This relationship is sensitive to grading lengths larger than one third of the Debye length.
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G. Grummt (1988) studied this question.
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