Shubnikov–de Haas effect in indium-doped PbTe films

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Shubnikov–de Haas oscillations in the magnetoresistance were observed in n-type, (111)-oriented PbTe films doped with approximately 0.25 at. % indium. Analysis of the data led to a Dingle temperature of 9±1 K and a transverse effective mass of 0.049±0.0006 me with a carrier concentration of 7.0×1024 m−3. It was found that the substrate-induced strain caused significant carrier transfer to the valley with main axis perpendicular to the film plane. Unexplained frequencies observed may indicate the occurrence of a phase transition.