Effect of illumination and magnetic fields on the electron transport properties of Pb0.75Sn0.25Te doped with indium

This is the authors' abstract. We don't add key points for this paper.

Electrical transport measurements between 300 and 1.5 K were made on two Pb0.75Sn0.25Te films doped approximately 0.5 at. % indium. The Hall mobility, Hall coefficient, and resistivity display an unusual temperature dependence relative to those of undoped PbSnTe which suggest a phase transition at approximately 18 K. These samples also exhibit high photosensitivity below 21 K where slowly relaxing and persistent photoconductivity was observed. Time constants for the photoconductive relaxation were found for temperatures between 8 and 19 K. The application of a magnetic field during sample cooldown had a large effect on the zero-field resistivity of the sample at 4.2 K.