Lead telluride detector arrays have been made by diffusing indium into arsenic-doped p-type lead telluride. Planar devices have a resistance-area product R0A ≃ 10 Ω cm2 at 180 K and a black body detectivity (D* 500 K) ≃ 6×109 cm Hz½ W−1 a typical array showing a responsivity variation of ±20%. The temperature variation of R0A is consistent with an abrupt junction model with an Auger-limited lifetime.
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Gooch et al. (1978) studied this question.