Using a vacuum evaporation method, we have deposited, on BaF2 substrates, PbTe films which are free of significant strains and have Hall mobilities as large as 2.5×106 cm2/V sec at 13 °K. This was accomplished by putting the emphasis on growth under near-equilibrium conditions rather than on growth under ultraclean conditions.
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A. Lopez‐Otero (1977) studied this question.
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