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Scaling relations for relaxation in strained-layer structures, based on simple descriptions of the dominant relaxation mechanisms and the influence of a stress-dependent relaxation activation energy, are obtained for general III-V semiconductor alloys. As a result, strained-layer relaxation in a given material system can be predicted over a wide range of structural parameters and temperature history based on a single relaxation measurement. This scaling treatment should prove useful in optimization of practical strained-layer device structures.
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Dodson et al. (1989) studied this question.
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